Areas
of Expertise
Molecular Beam Epitaxy (MBE) of Compound Semiconductors,
physics and applications of heterostructures, multiple
quantum wells and superlattices for optoelectronic
and electronic devices, magneto-optics; nonlinear
optics. Research activities
at UTA includes: low temperature grown GaAs (LTG-GaAs),
chirped superlattices for MQW waveguide and transverse
electroabsorption modulators, superlattice and asymmetric
quantum well for infrared detectors, vertical cavity
surface emitting lasers (VCSL) incorporating novel
guided mode resonant mirrors, and lateral selective
oxidation of MBE heterostructures for development
of lattice-matched insulators in the III-V compounds.
Background
Kambiz Alavi received his undergraduate and graduate
education in Physics at M.I.T. (Ph.D. 1981). He joined
the Solid State Electronics Research Laboratory at
Bell Laboratories in Murray Hill, NJ in 1981. There
he collaborated in pioneering research in molecular
beam epitaxy of (In, Al, Ga)As heterostructures for
optoelectronic and electron devices including novel
transistors, MQW lasers and graded bandgap MQW APDs.
In 1983 he joined Siemens Research and Technology
Laboratories in Princeton, NJ to establish a new MBE
Laboratory for optoelectronic and electron device
R&D.
He
joined UTA Electrical Engineering Dept. in August
1988 as an Associate professor. He has established
and conducted interdisciplinary research in MBE materials
growth, fabrication, and characterization of optoelectronic
and electron devices in collaboration with industry
and faculty within UTA and other universities. He
has developed several graduate courses on these subjects.
Dr. Alavi was promoted to full professor in 1994 and
received the UTA College of Engineering "Haliburton
Excellence in Research Award" in 1996. In summer of
1997 he was awarded an NSF University/Industry Research
Fellowship at Texas Instruments, were he participated
in MBE growth and characterization of InGaP/InGaAs/GaAs/AlGaAs
structures for the development of high efficiency
pseudomorphic high electron mobility transistors (PHEMT).
Dr.
Alavi has been a senior member of IEEE since 1988,
is a member of NSF Industry/University Cooperative
Research Center for Electronic Materials, Devices,
and Systems (CEMDAS) (a joint center of UTA and Texas
A&M University) and a member of Metroplex Research
Consortium for Electronic Devices and Materials.
