Areas of Expertise
Molecular Beam Epitaxy (MBE) of Compound Semiconductors, physics
and applications of heterostructures, multiple quantum wells and
superlattices for optoelectronic and electronic devices,
magneto-optics; nonlinear optics. Research activities at UTA
includes: low temperature grown GaAs (LTG-GaAs), chirped
superlattices for MQW waveguide and transverse electroabsorption
modulators, superlattice and asymmetric quantum well for
infrared detectors, vertical cavity surface emitting lasers (VCSL)
incorporating novel guided mode resonant mirrors, and lateral
selective oxidation of MBE heterostructures for development of
lattice-matched insulators in the III-V compounds.
Background
Kambiz Alavi received his undergraduate and graduate education
in Physics at M.I.T. (Ph.D. 1981). He joined the Solid State
Electronics Research Laboratory at Bell Laboratories in Murray
Hill, NJ in 1981. There he collaborated in pioneering research
in molecular beam epitaxy of (In, Al, Ga)As heterostructures for
optoelectronic and electron devices including novel transistors,
MQW lasers and graded bandgap MQW APDs. In 1983 he joined
Siemens Research and Technology Laboratories in Princeton, NJ to
establish a new MBE Laboratory for optoelectronic and electron
device R&D.
He joined UTA Electrical Engineering Dept. in August 1988 as an
Associate professor. He has established and conducted
interdisciplinary research in MBE materials growth, fabrication,
and characterization of optoelectronic and electron devices in
collaboration with industry and faculty within UTA and other
universities. He has developed several graduate courses on these
subjects. Dr. Alavi was promoted to full professor in 1994 and
received the UTA College of Engineering "Haliburton Excellence
in Research Award" in 1996. In summer of 1997 he was awarded an
NSF University/Industry Research Fellowship at Texas
Instruments, were he participated in MBE growth and
characterization of InGaP/InGaAs/GaAs/AlGaAs structures for the
development of high efficiency pseudomorphic high electron
mobility transistors (PHEMT).
Dr. Alavi has been a senior member of IEEE since 1988, is a
member of NSF Industry/University Cooperative Research Center
for Electronic Materials, Devices, and Systems (CEMDAS) (a joint
center of UTA and Texas A&M University) and a member of
Metroplex Research Consortium for Electronic Devices and
Materials. |
