Areas
of Expertise
Microwave component design; microwave semiconductor
circuit design.
Background
After graduating in 1971 from the University of Michigan,
Dr. Davis was employed at McMaster University where
he worked on automated network analysis, design of
a PIN diode phase shifter, and a hardware simulation
study for Canadian Satellite Communications. From
1973 to 1977, Dr. Davis was employed by General Electric
at their R&D Center in Schnectady, New York. At GE
his duties consisted of work in the design of alumina
and ferrite microstrip IMPATT amplifiers, hybrid coupler
power combiner, and microwave proximity detectors.
In 1977 Dr. Davis joined Raytheon in Bedford, Massachusetts
where he remained until the Fall of 1983. He worked
on IMPATT diode power combiners, thermal response
of IMPATT diodes, broadband directional couplers,
Schiffman phase shifters and filter design. Here he
was also involved in computer optimization techniques
and in software design for automated test stations.
More recently he has worked on magnetostatic surface
wave devices, broadband microwave circuits, high frequency
time domain measurements, and nonlinear parametric
effects.
